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分类:导师信息 来源:中国考研网 2016-05-13 相关院校:北京交通大学
基本信息
办公电话:010-51688413 电子邮件: xqzhang@bjtu.edu.cn
通讯地址:北京交通大学 光电子技术研究所 邮编:100044
教育背景与工作经历
1995年7月于中国科学院长春光学机密机械与物理研究所获得博士学位,1997年7月于复旦大学表面物理国家重点实验室博士后出站,1997年7月至今在北京交通大学作副教授和教授,其间先后在1998年4月—1999年4月于香港科技大学作高访,2001年7月—2002年8月于日本北海道大学作研究员。
研究方向(顺序不分先后)
发光、显示与新能源技术
光电功能材料与器件
招生专业
光学工程硕士
电子科学与技术博士
电子科学与技术硕士
科研项目
国家自然科学基金“面上”:非晶态金属氧化物透明TFT的研究,2014-01-01--2017-12-31,80.0万元,主持
国家自然科学基金“面上”:p型氧化物透明薄膜晶体管的研制,2013-01-01--2016-12-31,86.0万元,参加
科技部“973”:石墨烯的可控制备、物性与器件研究,2011-01-01--2012-12-31,263.0万元,参加
红果园:国防基础科研,2011-01-01--2012-12-31,275.0万元,参加
基本科研业务费:聚合物光电材料和器件,2010-01-01--2012-12-31,36.0万元,参加
国家自然科学基金“面上”:有机/ZnMgO复合薄膜结构新型紫外探测器的研究,2010-01-01--2012-12-31,35.0万元,主持
北京市自然基金“面上”:新型ZnO基合金薄膜紫外探测器的研制,2009-01-01--2011-12-31,12.0万元,主持
红果园:国防预研专项,2008-01-01--2009-12-31,180.0万元,参加
校科技基金:新型ZnO基合金薄膜紫外(日盲)探测器的研制,2007-01-01--2009-12-31,20.0万元,主持
北京市科委:新型高密度光存储材料的制备与应用研究,2006-09-30--2008-12-30,60.0万元,参加
国家自然科学基金“重点”:高质量氧化锌单晶薄膜的界面工程和能带工程及其光电子器件应用,2006-01-01--2009-12-31,25.0万元,主持
教育部:高对比度电致发光显示屏,2005-01-01--2007-12-31,15.0万元,参加
国家自然科学基金:锌铅钡氧化物等薄膜及其量子阱的MBE生长和特性研究,2005-01-01--2007-12-30,25.0万元,主持
教育部:ZnO薄膜的制备及其激光特性的研究,2003-12-12--2004-12-30,3.0万元,主持
教育部:新型光存储材料和器件的集成,2003-05-01--2005-04-01,20.0万元,参加
教育部:教育部跨世纪人才基金--彩色电致发光显示屏试制,2000-03-12--2002-10-12,30.0万元,参加
北京交通大学:长余辉发光材料及电致发光软屏技术的研究与开发,2000-05-01--2005-05-01,13.0万元,参加
教育部:陶瓷铝合金摩擦制动材料及其在高速铁路中的应用研究,2000-01-31--2001-12-31,36.0万元,参加
国家自然科学基金:ZnCdSe量子点的分子束外来延生长及激子特性研究,1997-01-01--1999-12-01,10.0万元,主持
教学工作
本科生:发光学
硕士:半导体光学性质
博士:纳米结构与低维物理
学术成果
期刊论文
Zuofu Hu, Zhenjun Li, Lu Zhu, Fengjuan Liu, Yanwu Lv, Xiqing Zhang and Yongsheng Wang, Narrow-band ultraviolet photodetector based on MgZnO and NPB heterojunction , Optics Letters, 37(2012)3072
F. J. Liu, Z. F. Hu, L. Zhu, Z. J. Li, H. Q. Huang, J.W. 5 Zhao, X. Q. Zhang, and Y. S. Wang,Solar-Blind Photoresistors Based on Mg0.48Zn0.52O Thin Films Grown on r-Al2O3 Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy,IEEE Transactions on electron devices,59(2012)1970
Zhenjun Li, Zuofu Hu, Li Jiang, Haiqin Huang, Fengjuan Liu, Xiqing Zhang, Yongsheng Wang, Penggang Yin , Lin Guo, Nanoporous ZnO film grown on sapphire by chemical vapor deposition, Materials Letters 79 (2012) 209–211
F.J. Liu, Z.F. Hu, J. Sun, Z.J. Li, H.Q. Huang, J.W. Zhao, X.Q. Zhang, Y.S. Wang,Ultraviolet photoresistors based on ZnO thin films grown by P-MBE, Solid-State Electronics,68 (2012)90
Jian-Wei Zhao, Jian Sun, Hai-Qin Huang, Feng-Juan Liu, Zuo-Fu Hu, Xi-Qing Zhang,Effects of ZnO buffer layer on GZO RRAM devices, Applied Surface Science, 258(2012)4588
Zhenjun Li, Zuofu Hu, Fengjuan Liu, Haiqin Hang, Xiqing Zhang,Yongsheng Wang, Lateral growth and optical properties of ZnO microcrystal on sapphire substrate, Optical materials, 34(2012)1908
Zhenjun Li, Zuofu Hu, Li Jiang, Haiqin Huang, Fengjuan Liu, Xiqing Zhang, Yongsheng Wang, Synthesis and optical properties of three-dimensional nanowall ZnO film prepared by atmospheric pressure chemical vapor deposition, Applied Surface Science,258 (2012)10175-10179
Zhao Jian-Wei, Liu Feng-Juan, Huang Hai-Qin, Hu Zuo-Fu, and Zhang Xi-Qing,Effects of substrate temperature on ZnO-based resistive random access memory devices, Chinese Physics B,21(2012)065201
DAI Qian, ZHU Lu, SUN Jian, ZHANG XiQing & WANG YongSheng,Organic photodetectors based on transparent electrodes for application in ultraviolet light detection,Science China, 55(2012)1551
Jianwei Zhao , Fengjuan Liu, Jian Sun,Haiqin Huang, Zuofu Hu , and Xiqing Zhang*,Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices, Chin. Optics Lett., 10 (2012) 013102
L. Zhu,W. Sh. Wang, Zh. G. Yao, X. Q. Zhang, and Y. S. Wang , Ultraviolet Photodetectors With Narrow-Band Spectral Response Using TAPC Donor, IEEE Transactions on Electron Devices,59(2012) 3583
Lu Zhu, Qian Dai, Zuo-fu Hu, Xi-qing Zhang, and Yong-sheng Wang, High response organic deep ultraviolet photodetector with PEDOT:PSS anode, Optics Letters, 36(2011) 1821
Lu Zhu, Qian Dai, Zuo-fu Hu, Xi-qing Zhang, and Yong-sheng Wang, Organic Deep Ultraviolet Photodetector With Response Peak Focusing on 270 nm Using the Acceptor BAlq, IEEE Photonics Technology Lett., 23(2011)1835
Zhenjun Li, Zuofu Hu, Fengjuan Liu, Jian Sun, Haiqin Huang, Xiqing Zhang, Yongsheng Wang, High quality hexangular ZnO crystals grown by chemical vapor deposition,Materials Letters, 65 (2011) 809
H.Q. Huang, F.J. Liu, J. Sun, J.W. Zhao, Z.F. Hu, Z.J. Li, X.Q. Zhang, Y.S. Wang, Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy, Applied Surface Science, 257 (2011) 10721
Fengjuan Liu, Rui Zhang, Zuofu Hu, Jian Sun, Haiqin Huang, Zhenjun Li, Jianwei Zhao, Penggang Yin, Lin Guo, Xiqing Zhang, and Yongsheng Wang, Structural and optical properties of non-polar (11-20) ZnO films grown by plasma-assisted molecular-beam epitaxy, IEEE Transactions on Plasma Science, 39(2011)700
HUANG Hai-Qin, LIU Feng-Juan, SUN Jian, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing*, Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering, Journal of Physics and Chemistry of Solids, 72 (2011) 1393
SUN Jian, DAI Qian, LIU FengJuan, HUANG HaiQin, LI ZhenJun, ZHANG XiQing* & WANG YongSheng, Ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response,Science China(Physics, Mechanics & Astronomy), 54(2011)102
HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing, WANG Yong-Sheng, Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering, Chin. Phys. Lett. 28 (2011) 128502
Jian Sun, Kuanjun Peng, Lu Zhu, Zuofu Hu, Qian Dai, Xiqing Zhang, and Yongsheng Wang, Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD, Chin. Optics Lett., 9(2011) 052501
Q. Dai and X. Q. Zhang, High-response ultraviolet photodetector based on NPB and PBD, Optics Express, 18(2010)11821
Jian Sun, Feng-Juan Liu, Hai-Qin Huang, Jian-Wei Zhao, Zuo-Fu Hu, Xi-Qing Zhang, Yong-Sheng Wang, Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering, Applied Surface Science, 257 (2010) 921–924
X.Q. Zhang Ikuo Suemune, H. Kumano, Z.G. Yao, S.H. Huang, Room temperature ultraviolet lasing action in high-quality ZnO thin films, J. Lumin., 122-123(2007)828
Z.G. Yao, X.Q. Zhang, Ikuo. Suemune, S.H. Huang, Room-temperature stimulated emission from ZnO thin films grown by radio-frequency magnetron sputtering, J. Lumin., 122-123(2007)825
X. Q. Zhang, Z. G. Yao, and S. H. Huang, Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates, J. Appl. Phys. 99 (2006) 063709
Peng Du, Xiqing Zhang, Xuebai Sun, and Yongsheng Wang,n-type ZnS used as electron transport material in organic light-emitting diodes,Chin. Phys. 15(2006)1370
Yao Zhi-Gang, Zhang Xi-Qing, Shang Hong-Kai et al, Lasing action of ZnO thin film grown by radio-frequency magnetron sputtering, Chin. Phys., 14(2005)1205
D.D. Wang, Y.S. Wang, X.Q. Zhang, Z.Q. He, L.X. Yi, L.E. Deng, C.X. Zhang, X. Han, Enlargement of complete two-dimensional band gap by using photonic crystal heterostructure, Appl. Phys. B, 340(2005)1882
W.Q. Peng, S.C. Qu, G.W. Cong, X.Q. Zhang, Z.G. Wang, Optical and magnetic properties of ZnS nanoparticles doped with Mn2+, Journal of Crystal Growth 282 (2005) 179–185
D. P. Xiong,X. Q. Zhang et al, Optical properties of ZnO thin films deposited by rf sputtering on SiO2 substractes. Chin Opt. Lett 2 (2004)179
X. Q. Zhang, Ikuo Suemune et al, Surface-emitting stimulated emission in high-quality ZnO thin films, J. Appl. Phys., 96(2004) 3733
X. Q. Zhang, ZK Tang et al, Second harmonic generation in self-assembled ZnO microcrystallite thin films, Thin Solid Films 250 (2004)320
X. Q. Zhang, Z. K. Tang, A. Ohtomo, and H. Koinuma,Optical gain in second harmonic generation in self assembled ZnO microcrystannite thin films J. Crystal Growth 259(2003) 286
X. Q. Zhang, Z. K. Tang et al, Resonant exciton Second harmonic generation in self assembled ZnO microcrystannite thin films J. of Phys.: Condens. Matter 15(2003) 5191
X. Q. Zhang, S. Ganapathy, I. Suemune et al, Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers, Appl. Phys. Lett. 83(2003) 4524.
Sasikala Ganapathy, X. Q. Zhang, Ikuo Suemune et al, GaNAs as Strain Compensating Layer for 1.55_m Light Emission from InAs Quantum Dots, Jpn. J. Appl. Phys. 42 (2003) 5598.
X. Q. Zhang, Sasikala Ganapathy, Ikuo Suemune et al, Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy, J. Appl. Phys. 92(2002) 6813.
著作译著
专利
1.张希清,李彬,王海龙,周东站,彭云飞,高耸,衣立新,王永生,一种氧化铟基薄膜晶体管及其制作方法(2013 1 0195082.5)
2.张希清,周东站,王海龙,李彬,高耸,彭云飞,王永生,一种氧化锌基薄膜晶体管及其制作方法(2013 1 0195118.X)
3.张希清等MgZnO/NPB紫外光探测器及其制作方法(201210109738.2)
4.张希清等,MgZnO日盲光敏电阻器及其制备方法(2011104277518)
5.代千张希清等一种基于NPB和BND的紫外光探测器(ZL201010256417.6)
6.张希清 孙 建 黄海琴 刘凤娟 胡佐富 赵建伟,在ITO衬底上生长ZnMgO合金薄膜的方法(ZL200810222662.8)
7.张希清 刘凤娟 孙 建 黄海琴 姚志刚 王永生,光辅助MBE系统及生长ZnO单晶薄膜的方法(ZL200710099109.5)
8.张希清 刘凤娟 孙 建 黄海琴 姚志刚 王永生,在SiO2衬底上生长ZnO薄膜的方法 (ZL200710099110.8)
9.张希清 姚志刚 杜鹏,一种有机薄膜电致发光器件(ZL 200510012212.2)
10.张希清 王丽 姚志刚,新型有机薄膜电致发光器件(ZL200420009182.0)
11.张希清 徐征 王永生,多层有机薄膜电致发光器件(ZL 200420067006.2)
12.张希清 王丽 姚志刚,一种有机薄膜电致发光器件(ZL 200420009183.5)
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